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Same model may have multiple batches, images only for reference.
2SC2235-O(FA1,F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC2235-O(FA1,F,M)

Part No 2SC2235-O(FA1,F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 800MA 120V TO226-3
Datasheet
2SC2235-O(FA1,F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 800mA
Voltage - Collector Emitter Breakdown (Maximum) 120V
Vce Saturation (Maximum) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 80 @ 100mA, 5V
Power - Max 900mW
Frequency - Transition 120MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-226-3, TO-92-3 Long Body
Manufacturer Package TO-92MOD
Win Source Part Number 762553-2SC2235-O(FA1,F,M)
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC2235-O(FA1,F,M) CAD Model

Description

The Toshiba Semiconductor and Storage 762553-2SC2235-O(FA1,F,M) is an NPN transistor that comes in a TO-226-3, TO-92-3 Long Body package.

  • Maximum Power: 900mW
  • Frequency Transition: 120MHz
  • Current Collector (Ic): 800mA
  • Voltage Collector Emitter Breakdown: 120V
  • Vce saturation: 1V @ 50mA, 500mA
  • Current Collector Cutoff: 100nA (ICBO)
  • DC Current Gain (hFE): 80 @ 100mA, 5V

This transistor has a maximum power of 900mW and a frequency transition of 120MHz. It is suitable for use in discrete semiconductor products.

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