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Same model may have multiple batches, images only for reference.
2SC2705-O(TE6,F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC2705-O(TE6,F,M)

Part No 2SC2705-O(TE6,F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 150V 0.05A TO-92MOD
Datasheet
2SC2705-O(TE6,F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 1V @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 800mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package LSTM
Win Source Part Number 1004354-2SC2705-O(TE6,F,M)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC2705-O(TE6,F,M) CAD Model

Description

The Toshiba Semiconductor and Storage 2SC2705-O(TE6,F,M) is an NPN bipolar junction transistor with a maximum collector-emitter breakdown voltage of 150V and a maximum collector current of 50mA.

  • Maximum Collector-Emitter Breakdown Voltage: 150V
  • Maximum Collector Current: 50mA
  • Frequency Transition: 200MHz
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 800mW
  • Vce (sat): 1V @ 1mA, 10mA
  • Package: Ammo package
  • Operating Temperature Range: Up to 150°C (TJ)

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