The 2SC2792 is a silicon NPN epitaxial planar transistor designed for high-frequency power amplification, particularly in VHF and UHF applications. It is commonly used in mobile communication devices and radio transmitters due to its high power gain and efficiency.

Applications:

• VHF/UHF Power Amplifiers
• Mobile Communication Devices
• Radio Transmitters
• Oscillator Circuits

Features:

• High Power Gain
• High Collector Current Capability
• Low Distortion
• High Transition Frequency (fT)

Benefits:

• Provides efficient amplification of high-frequency signals.
• Enables high output power in radio communication systems.
• Minimizes signal distortion for clear and reliable transmission.
• Offers stable performance in demanding RF environments.

Technical Specifications (Typical):

While specific values may vary, typical specifications for the 2SC2792 include:

• Collector-Emitter Voltage (VCEO): 20V
• Collector Current (IC): 2A
• Power Dissipation (PC): 7W
• Transition Frequency (fT): 800 MHz
• Power Gain: 10 dB (typical)

The 2SC2792 is designed to deliver high power gain at high frequencies, making it an ideal choice for VHF/UHF power amplifier applications. It is commonly found in mobile radios and other wireless communication devices. It is typically packaged in a small outline transistor (SOT) package, such as SOT-89.