The 2SC3298 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency amplifier applications and is often used in various communication and broadcasting equipment. Its key characteristics include high gain and low noise figure, making it suitable for amplifying weak signals with minimal distortion.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers in communication systems
• TV and radio tuners
• Broadcasting equipment

Features

• High transition frequency (fT)
• Low noise figure
• High power gain
• Epitaxial planar structure for enhanced reliability
• NPN silicon transistor

Benefits

• Improved signal amplification with minimal noise
• Enhanced performance of communication and broadcasting systems
• Increased reliability and lifespan of electronic circuits
• Efficient power utilization

Technical Specifications

The 2SC3298 transistor typically exhibits the following specifications:

• Collector-Base Voltage (VCBO): Approximately 35V
• Collector-Emitter Voltage (VCEO): Approximately 20V
• Emitter-Base Voltage (VEBO): Approximately 3V
• Collector Current (IC): Approximately 80mA
• Collector Dissipation (PC): Approximately 250mW
• Transition Frequency (fT): Approximately 5 GHz
• Noise Figure (NF): Approximately 2.0 dB
• Operating and Storage Temperature Range: -55°C to +150°C

The 2SC3298 is engineered to provide optimal performance in high-frequency environments. Its low noise figure ensures that weak signals are amplified without introducing excessive noise, which is crucial for sensitive receiver applications. The high transition frequency allows it to operate effectively at high frequencies, making it suitable for use in modern communication systems. The epitaxial planar structure contributes to its robustness and longevity, ensuring reliable operation over extended periods. Its use in broadcasting equipment helps to maintain signal clarity and strength, ensuring that the transmitted signal is of high quality.