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2SC3303-Y(T6L1,NQ)

Part No 2SC3303-Y(T6L1,NQ)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS NPN 80V 5A PW-MOLD  /  Bipolar (BJT) Transistor NPN 80 V 5 A 120MHz 1 W Surface Mount PW-MOLD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 3A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 1V
Power - Max 1 W
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package PW-MOLD
Base Product Number 2SC3303
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 2,000
Win Source Part Number 1037034-2SC3303-Y(T6L1,NQ)
Ultra Librarian 3D Model Ultra Librarian 2SC3303-Y(T6L1,NQ) CAD Model

Description

The 2SC3303-Y(T6L1,NQ) is a bipolar junction transistor from Toshiba Semiconductor and Storage.

  • Category: Transistors - Bipolar (BJT) - Single
  • Maximum Power: 1 W
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Transistor Type: NPN
  • Frequency Transition: 120MHz
  • RoHS Compliant: Yes
  • Supply and demand status: Shortage

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2458 $56.0610
100+ $1.0222 $102.2200
155+ $0.9902 $153.4810
210+ $0.9583 $201.2430
270+ $0.9263 $250.1010
365+ $0.8305 $303.1325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,620 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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