The 2SC4667-0(TE85R) is an NPN silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-frequency amplifier applications and oscillator circuits. The device is known for its low noise figure and high gain characteristics at high frequencies, making it suitable for sensitive receiver and amplifier designs.

Applications

• High-frequency amplifiers
• Oscillator circuits
• RF front-end amplifiers
• Mixer circuits
• Communication equipment

Features

• Low noise figure
• High gain
• High transition frequency
• Small signal amplifier
• Surface mount package

Benefits

• Improved signal sensitivity: Low noise figure enhances the ability to amplify weak signals without adding significant noise.
• Increased signal strength: High gain provides strong amplification of the input signal.
• Suitable for high-frequency applications: High transition frequency enables use in high-frequency circuits.
• Compact design: Small surface mount package allows for dense circuit designs.
• Reliable performance: Toshiba's manufacturing process ensures reliable and consistent performance.

Additional Details

The 2SC4667-0(TE85R) is typically supplied in a small surface-mount package, such as the SOT-23 or similar. The transistor is designed to operate with a collector-emitter voltage (VCEO) and collector current (IC) within specified limits. The transition frequency (fT) is a key parameter indicating the frequency at which the gain of the transistor starts to decrease. This device is optimized for low-power signal amplification. The datasheet provides detailed specifications regarding DC and AC characteristics, thermal resistance, and maximum ratings. The 'TE85R' suffix likely indicates tape and reel packaging for automated assembly. As a small signal transistor, it is crucial to observe the maximum ratings to prevent damage to the device.