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2SC4793(PAIO,F)

Part No 2SC4793(PAIO,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1219+
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 751213-2SC4793(PAIO,F)
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC4793(PAIO,F) CAD Model

Description

The 2SC4793(PAIO,F) is a silicon NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-power amplification and switching applications, particularly in audio amplifiers and power supplies. Its key features include high collector current capability, high power dissipation, and relatively high breakdown voltage.

Applications

  • Audio power amplifiers
  • Switching power supplies
  • Motor control circuits
  • Linear regulators
  • General-purpose power amplification

Features

  • High collector current capability
  • High power dissipation
  • High breakdown voltage
  • Low saturation voltage
  • Excellent linearity

Benefits

  • High output power: High collector current capability enables the transistor to deliver significant output power in audio amplifier applications.
  • Robust performance: High power dissipation allows the transistor to operate reliably at high power levels.
  • Reliable operation in high-voltage circuits: High breakdown voltage ensures the transistor can withstand high voltages without failure.
  • Efficient switching: Low saturation voltage minimizes power dissipation during switching, improving efficiency.
  • Low distortion: Excellent linearity ensures faithful signal reproduction in audio amplifiers.

Additional Details

The 2SC4793(PAIO,F) is typically packaged in a TO-3P or similar through-hole package, designed for efficient heat dissipation. The high collector current rating allows the transistor to drive low-impedance loads. The high power dissipation capability necessitates the use of a heatsink to maintain the junction temperature within allowable limits. The "PAIO" likely refers to a specific lead forming or packaging variant. The low saturation voltage (VCE(sat)) minimizes power loss when the transistor is in the ON state, contributing to higher efficiency. It operates with a VCEO around 230V, enabling it to operate with high voltage circuits. The transistor has relatively high current gain, enabling the device to be easily driven by low current control signals. The datasheet provides detailed specifications on DC and AC characteristics, thermal resistance, and safe operating area. It's an enhanced hFE version of the 2SC4793.

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