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Same model may have multiple batches, images only for reference.
2SC5198-O(S1,E
Same model may have multiple batches, images only for reference.

2SC5198-O(S1,E

Part No 2SC5198-O(S1,E
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Bipolar (BJT) Transistor NPN 140 V 10 A 30MHz 100 W Through Hole TO-3P(N)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mfr Toshiba Semiconductor and Storage
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 140 V
Vce Saturation (Max) @ Ib, Ic 2V @ 700mA, 7A
Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A, 5V
Power - Max 100 W
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Base Product Number 2SC5198
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1478322-2SC5198-O(S1,E
Ultra Librarian 3D Model Ultra Librarian 2SC5198-O(S1,E CAD Model

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