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Same model may have multiple batches, images only for reference.
TTC004B,Q
Same model may have multiple batches, images only for reference.

TTC004B,Q

Part No TTC004B,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 1.5A TO126N
Datasheet
TTC004B,Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Transistor Polarity NPN
Maximum Current Collector 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 140 @ 100mA, 5V
Maximum Power Dissipation 10W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-126N
Win Source Part Number 383251-TTC004B,Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TTC004B,Q CAD Model

Description

The 383251-TTC004B,Q is an NPN transistor that has a collector-emitter breakdown voltage of 160V and a maximum current collector of 1.5A manufactured by Toshiba Semiconductor and Storage.

  • Collector-Emitter Breakdown Voltage: 160V
  • Maximum Current Collector: 1.5A
  • Frequency Transition: 100MHz
  • Typical Gain (hFE): 140 @ 100mA and 5V
  • Maximum Power Dissipation: 10W
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Case/Package: TO-126N
  • Popularity Rating: medium
  • Suitable for: use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3796 $51.2460
325+ $0.3115 $101.2375
500+ $0.3017 $150.8500
685+ $0.2920 $200.0200
890+ $0.2823 $251.2470
1,190+ $0.2531 $301.1890
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Availability: 18,090 pieces
MOQ: 135 pcs
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