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Same model may have multiple batches, images only for reference.
2SC5549,T6F(J
Same model may have multiple batches, images only for reference.

2SC5549,T6F(J

Part No 2SC5549,T6F(J
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 1A 400V TO226-3
Datasheet
2SC5549,T6F(J Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 400V
Max Vce (sat) 1V @ 25mA, 200mA
Collector Cut-off Current(Max) 100μA (ICBO)
Typical Gain (hFE) (Min) 20 @ 40mA, 5V
Maximum Power Dissipation 900mW
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004463-2SC5549,T6F(J
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5549,T6F(J CAD Model

Description

The Toshiba Semiconductor and Storage NPN transistor is a high-performance component used in electronic circuits.

  • Maximum Current Collector: 1A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
  • Maximum Vce (sat): 1V @ 25mA, 200mA
  • Collector Cut-Off Current (Max): 100μA (ICBO)
  • Typical Gain (hFE) (Min): 20 @ 40mA, 5V
  • Maximum Power Dissipation: 900mW
  • Operating Temperature Range: 150°C (TJ)
  • Component Status: Active
  • Mounting: Through-Hole

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