The 2SC995 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in various amplifier and switching applications. This transistor is often found in audio amplifiers, switching circuits, and general-purpose amplification stages.

Applications:

• Audio Amplifiers
• Switching Circuits
• General-Purpose Amplification
• Driver Stages
• Signal Processing Circuits

Features:

• NPN Silicon Epitaxial Planar Transistor
• High Current Gain (hFE)
• Low Saturation Voltage
• Fast Switching Speed
• Excellent Linearity

Benefits:

• Provides high amplification in audio circuits.
• Enables efficient switching in electronic circuits.
• Offers versatile performance in various amplification stages.
• Ensures minimal power loss in switching applications.
• Maintains signal fidelity due to excellent linearity.

Technical Specifications:

Collector-Base Voltage (VCBO): 60V
Collector-Emitter Voltage (VCEO): 50V
Emitter-Base Voltage (VEBO): 5V
Collector Current (IC): 1A
Collector Dissipation (PC): 800mW
Transition Frequency (fT): 100MHz (Typical)
Operating Temperature Range: -55°C to +150°C

The 2SC995 is typically housed in a TO-92 or similar through-hole package. Always consult the official Toshiba datasheet for precise specifications, recommended operating conditions, and application notes. This transistor has been utilized in a wide array of electronic devices due to its robust characteristics and widespread availability. Proper biasing and circuit design are essential to maximize its performance and ensure stable operation.