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Same model may have multiple batches, images only for reference.
2SD1407A-Y(F) Real Image
Same model may have multiple batches, images only for reference.

2SD1407A-Y(F)

Part No 2SD1407A-Y(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 5A TO220NIS
Datasheet
2SD1407A-Y(F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Part Status Obsolete(EOL)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) @ Ib, Ic 2V @ 400mA, 4A
Current - Collector Cutoff (Maximum) 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 120 @ 1A, 5V
Power - Max 30W
Frequency - Transition 12MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3 Full Pack
Manufacturer Package TO-220NIS
Win Source Part Number 762791-2SD1407A-Y(F)
Popularity Medium
Supply and Demand Status Limited
Family Name 2SD1407AY
Introduction Date December 19, 1997
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian 2SD1407A-Y(F) CAD Model

Description

The Toshiba Semiconductor and Storage 762791-2SD1407A-Y(F) electronic component is a TO-220-3 Full Pack type transistor.

  • Maximum Power: 30W
  • Current Rating: 5A
  • Voltage Rating: 100V

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