The 2SD1547 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-voltage, high-speed switching applications.

Applications

• Switching power supplies
• DC-DC converters
• Inverters
• Motor control circuits
• Lighting ballast circuits

Features

• High breakdown voltage (VCBO = 600V)
• High-speed switching (tf = 0.5 μs typical)
• Low collector saturation voltage (VCE(sat) = 1.5V max)
• High collector current capability (IC = 8A)
• Integrated damper diode

Benefits

• Enables efficient high-voltage switching circuits.
• Reduces switching losses due to fast switching speeds.
• Minimizes power dissipation due to low saturation voltage.
• Allows for high-current operation.
• Provides protection against voltage spikes due to the integrated damper diode.

Additional Details

The 2SD1547 comes in a TO-3P(N) package for efficient heat dissipation. Absolute maximum ratings include a collector-base voltage of 600V, collector-emitter voltage of 500V, and emitter-base voltage of 9V. The continuous collector current is rated at 8A, and the peak collector current is 16A. Power dissipation is 80W. Storage temperature ranges from -55°C to 150°C. The presence of the integrated damper diode helps protect the transistor from inductive kickback voltages in switching applications. It provides a robust and reliable solution for high-voltage, high-speed switching needs.