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Same model may have multiple batches, images only for reference.
2SJ201-YF
Same model may have multiple batches, images only for reference.

2SJ201-YF

Part No 2SJ201-YF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description P-ch Power MOSFET/150W, -200V/-12A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 12 A
Drain to Source Breakdown Voltage -200 V
Drain to Source Voltage (Vdss) 200 V
Element Configuration Single
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 1.5 nF
Max Operating Temperature 150 °C
Max Power Dissipation 150 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Packaging Bulk
Power Dissipation 150 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1223075-2SJ201-YF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SJ201-YF CAD Model

Description

The Toshiba Semiconductor and Storage 2SJ201-YF Transistor is a FETs, MOSFETs - RF electronic component.

  • Drain to Source Voltage (Vdss): 200 V
  • Continuous Drain Current (ID): 12 A
  • Packaging: Bulk
  • Mount: Through Hole
  • Alternative Parts (Cross-Reference): 2SJ201-Y(F), 2SJ201Y(F), 2SJ201YF
  • Supply and Demand Status: Limited
  • RoHS Compliant: Yes
  • Radiation Hardening: No

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