The Toshiba Semiconductor and Storage 2SK2314(F) is a single element MOSFET transistor with a drain to source voltage (Vdss) of 100 V and a maximum power dissipation of 75 W.

• Drain to Source Voltage (Vdss): 100 V
• Maximum Power Dissipation: 75 W
• Input Capacitance: 1.1 nF
• Rise Time: 20 ns
• Fall Time: 50 ns
• Applications: RF transmitters, amplifiers, and oscillators
• Package: TO-220-3
• Pins: 3
• Height: 4.7 mm
• Lead-Free: Yes
• RoHS Compliant: Yes
• Maximum Operating Temperature: 150 °C
• Minimum Operating Temperature: -55 °C
• Drain to Source Resistance: 85 mΩ
• Gate to Source Voltage (Vgs): 20 V
• Popularity: Popular transistor
• Supply: Shortage of supply