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2SK2789(TE24L)

Part No 2SK2789(TE24L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 100V 27A TO220SM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-252-3
Continuous Drain Current (ID) 27 A
Current Rating 27 A
Drain to Source Voltage (Vdss) 100 V
Fall Time 50 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 1.1 nF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 60 W
Min Operating Temperature -55 °C
Mount Surface Mount, Through Hole
Number of Pins 3
Packaging Tape & Reel (TR)
Radiation Hardening No
Rds On Max 85 mΩ
Rise Time 20 ns
RoHS Compliant
Voltage Rating (DC) 100 V
Win Source Part Number 1037725-2SK2789(TE24L)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2789(TE24L) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a win source part number of 1037725-2SK2789(TE24L).

  • Packaging: tape & reel (TR)
  • Current rating: 27 A
  • Mounting: SMD (SMT)
  • Drain to source voltage (Vdss): 100 V
  • Input capacitance: 1.1 nF
  • Number of pins: 3
  • Rise time: 20 ns
  • Fall time: 50 ns
  • Category: transistors - FETs, MOSFETs - RF
  • Case/package: TO-252-3
  • Supply and demand status: shortage
  • RoHS compliance: lead-free and RoHS compliant
  • Maximum operating temperature: 150 °C
  • Radiation hardening: no
  • Minimum operating temperature: -55 °C
  • Voltage rating (DC): 100 V
  • Max power dissipation: 60 W
  • Continuous drain current (ID): 27 A
  • Gate to source voltage (Vgs): 20 V
  • Rds On Max: 85 mΩ

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Shipped from HK warehouse
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