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Same model may have multiple batches, images only for reference.
2SK2866(F) Real Image
Same model may have multiple batches, images only for reference.

2SK2866(F)

Part No 2SK2866(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 10 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number 2SK2866
Standard Package 50 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 876285-2SK2866(F)
Ultra Librarian 3D Model Ultra Librarian 2SK2866(F) CAD Model

Description

The 876285-2SK2866(F) is an N-channel MOSFET designed for high voltage applications and is an obsolete product from Toshiba Semiconductor and Storage.

  • Drain-to-Source Voltage: 600V
  • Continuous Drain Current: 10A @ 25°C
  • On-Resistance: 750mOhm @ 5A, 10V
  • Gate Threshold Voltage: 4V @ 1mA
  • Power Dissipation: 125W
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Gate Charge: 45nC @ 10V
  • Input Capacitance: 2040pF @ 10V
  • Maximum Junction Temperature: 150°C

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