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2SK363-V

Part No 2SK363-V
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans JFET N-CH Si 3-Pin TO-92
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160212-2SK363-V
Popularity Low
Supply and Demand Status Limited
Family Name 2SK363
Introduction Date January 04, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK363-V CAD Model

Description

Overview

The 2SK363-V is an N-channel MOSFET known for its excellent voltage and current handling capabilities. This component provides robust performance in a variety of power management applications.

Features and Benefits

  • High Voltage Rating: Suitable for use in high-voltage circuits.
  • Stable Performance: Ensures consistent operation in fluctuating conditions.
  • Durability: Built to withstand thermal and electrical stress.

Applications

  • Inverter circuits
  • Battery protection circuits
  • Power amplifiers
  • Industrial control systems

The 2SK363-V is a reliable choice for engineers seeking to optimize their power management solutions with a dependable and versatile MOSFET.

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