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Same model may have multiple batches, images only for reference.
2SK3857TT-B Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SK3857TT-B

Part No 2SK3857TT-B
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160298-2SK3857TT-B
Popularity Low
Supply and Demand Status Sufficient
Family Name 2SK3857TT-B
Introduction Date March 02, 2006
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK3857TT-B CAD Model

Description

2SK3857TT-B Advanced MOSFET Transistor

The 2SK3857TT-B is a specialized N-channel MOSFET renowned for its fast recovery and high-efficiency operation. Suited for use in contemporary electronic systems, it offers improved switching performance.

  • Applications:
    • Telecommunication systems
    • Electric vehicle powertrains
    • Renewable energy systems
  • Features and Benefits:
    • Fast recovery time: Minimizes losses during switching, enhancing operational efficiency.
    • Stable performance: Provides reliable results in fluctuating environmental conditions.
  • Additional Details:
    • Withstands voltages upwards of 1200V
    • Operates at currents up to 4.5A
    • Optimized for high-efficiency power conversion

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