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2SK4013(STA4.Q.M)

Part No 2SK4013(STA4.Q.M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 800V 6A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 6 A
Drain to Source Voltage (Vdss) 800 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 45 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1012854-2SK4013(STA4.Q.M)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK4013(STA4.Q.M) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK4013(STA4.Q.M) is a single element MOSFET transistor with a Drain to Source Voltage (Vdss) of 800 V, Power Dissipation of 45 W and Continuous Drain Current (ID) of 6 A.

  • Drain to Source Voltage (Vdss): 800 V
  • Power Dissipation: 45 W
  • Continuous Drain Current (ID): 6 A
  • Pins: 3
  • RoHS Compliant: Yes
  • Maximum Operating Temperature: 150 °C
  • Min Operating Temperature: -55 °C
  • Mounting Type: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6815 $51.1125
180+ $0.5592 $100.6560
280+ $0.5417 $151.6760
385+ $0.5243 $201.8555
495+ $0.5068 $250.8660
665+ $0.4544 $302.1760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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