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GT15J341,S4X

Part No GT15J341,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description PB-F DISCRETE IGBT TRANSISTOR TO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 15 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Power - Max 30 W
Switching Energy 300µJ (on), 300µJ (off)
Input Type Standard
Td (on/off) @ 25°C 60ns/170ns
Test Condition 300V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220SIS
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1006765-GT15J341,S4X
Ultra Librarian 3D Model Ultra Librarian GT15J341,S4X CAD Model

Description

The GT15J341,S4X is a single IGBT transistor designed for use in discrete semiconductor products.

  • Power Rating: 30 W
  • Reverse Recovery Time: 80 ns
  • IGBT Type: not specified
  • Collector-Emitter Breakdown Voltage: 600 V
  • Maximum Collector Current: 15 A
  • Vce(on): 2V @ 15V and 15A
  • Switching Energy (on): 300µJ
  • Switching Energy (off): 300µJ
  • Input Type: standard
  • Operating Temperature Range: up to 150°C
  • Package: TO-220-3 full pack
  • Supplier: Toshiba Semiconductor and Storage
  • MSL Level: 1 (Unlimited)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 3,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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