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Same model may have multiple batches, images only for reference.
GT50J322 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT50J322

Part No GT50J322
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 269831-GT50J322
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian GT50J322 CAD Model

Description

The GT50J322 is an insulated gate bipolar transistor (IGBT) manufactured by Toshiba Semiconductor and Storage. It is a single IGBT component designed for use in various electronic applications, such as power supplies, motor control, and inverters.

  • Collector-Emitter Voltage: 600 V
  • Collector Current: 50 A

The GT50J322 IGBT has a low on-state voltage drop and a fast switching speed, making it ideal for high-frequency applications. It is compact and can be easily mounted on a PCB.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6900 $59.1800
53+ $2.2072 $116.9816
82+ $2.1379 $175.3078
112+ $2.0686 $231.6832
145+ $2.0005 $290.0725
194+ $1.7937 $347.9778
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Availability: 23,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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