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Same model may have multiple batches, images only for reference.
GT50JR22(STA1,E,S)
Same model may have multiple batches, images only for reference.

GT50JR22(STA1,E,S)

Part No GT50JR22(STA1,E,S)
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (F - I)
Description Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN Magazine
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Voltage (VCEO) 600 V
Element Configuration Single
Lead Free Yes
Max Collector Current 50 A
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
RoHS Compliant
Win Source Part Number 1039011-GT50JR22(STA1,E,S)
Categories OEM Parts(F-I)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian GT50JR22(STA1,E,S) CAD Model

Description

The Toshiba GT50JR22(STA1,E,S) is a single element configuration bipolar junction transistor (BJT) that has a collector-emitter voltage (VCEO) of 600V and a maximum collector current of 50A.

  • Collector-Emitter Voltage (VCEO): 600V
  • Maximum Collector Current: 50A
  • Supply and Demand Status: Shortage
  • Maximum Operating Temperature: 175 °C

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Quantity Unit Price Ext. Price
9+ $6.0920 $54.8280
21+ $4.9986 $104.9706
31+ $4.8424 $150.1144
43+ $4.6862 $201.5066
56+ $4.5300 $253.6800
74+ $4.0614 $300.5436
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Availability: 330 pieces
MOQ: 9 pcs
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