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HN1A01FU-Y,LF

Part No HN1A01FU-Y,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 50V 0.15A US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 80MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 001670-HN1A01FU-Y,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1A01FU-Y,LF CAD Model

Description

This active electronic component is manufactured by Toshiba Semiconductor and Storage. It is a discrete semiconductor product with a medium popularity and sufficient supply and demand status. The component has a US6 case and can operate at a temperature range of 125°C. It has a maximum current collector of 150mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,475+ $0.0393 $57.9675
3,575+ $0.0323 $115.4725
5,360+ $0.0323 $173.1280
7,410+ $0.0312 $231.1920
9,620+ $0.0300 $288.6000
13,045+ $0.0266 $346.9970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 132,000 pieces
MOQ: 1475 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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