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Same model may have multiple batches, images only for reference.
HN1B04FU-GR,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1B04FU-GR,LF

Part No HN1B04FU-GR,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A US6
Datasheet
HN1B04FU-GR,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 150MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 001681-HN1B04FU-GR,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1B04FU-GR,LF CAD Model

Description

It is a discrete semiconductor product with a maximum power dissipation of 200mW. The HN1B04FU-GR,LF is designed for use in a variety of electronic devices and systems that require high-quality performance. It is a great choice for those who are looking for a reliable and efficient electronic component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.2927 $81.8781
6+ $22.3943 $134.3658
8+ $21.6944 $173.5552
12+ $20.9944 $251.9328
15+ $20.2945 $304.4175
20+ $18.1959 $363.9180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,800 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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