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HN1C01FE-GR

Part No HN1C01FE-GR
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 50V 0.15A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 100mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 068181-HN1C01FE-GR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1C01FE-GR CAD Model

Description

The Toshiba Semiconductor and Storage is a dual NPN transistor polarity electronic component. It is a medium popularity product with sufficient supply and demand status. This product is manufactured by Toshiba Semiconductor and Storage and its Win Source Part Number is 068181-HN1C01FE-GR. The product has a maximum current collector of 150mA and a maximum power dissipation of 100mW. The product is rated for a temperature range of 150 degrees Celsius (TJ) and has a maximum Vce (sat) of 250mV at 10mA, 100mA.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,725+ $0.0335 $57.7875
4,170+ $0.0277 $115.5090
6,525+ $0.0266 $173.5650
8,700+ $0.0266 $231.4200
11,365+ $0.0254 $288.6710
15,000+ $0.0231 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,600 pieces
MOQ: 1725 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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