The Toshiba Semiconductor and Storage HN3C51F-GR is an obsolete dual NPN transistor designed for use in discrete semiconductor products. With a maximum collector-emitter breakdown voltage of 120V and a maximum power dissipation of 300mW, this transistor is capable of handling a maximum current collector of 100mA. The transistor has a typical gain (hFE) of 200 at 2mA and 6V. The collector cut-off current (max) is 100nA (ICBO) and the maximum Vce (sat) is 300mV at 1mA and 10mA. The HN3C51F-GR is packaged in SM6 and is mounted using SMD (SMT) technology. The frequency transition of the transistor is 100MHz and it has a temperature range of -55°C to 150°C (TJ).