The Toshiba Semiconductor and Storage 001667-HN1A01FE-GR,LF is a dual PNP transistor with a transition frequency of 80MHz. It has a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. The transistor is designed for SMD (SMT) mounting and comes in an ES6 package. It has a collector cut-off current of 100nA (ICBO) and a typical gain (hFE) of 200 at 2mA and 6V. The maximum power dissipation is 100mW and the maximum Vce (sat) is 300mV at 10mA and 100mA. The product operates in a temperature range of 150°C (TJ) and has a medium popularity with a balance in supply and demand.