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Same model may have multiple batches, images only for reference.
2SA1360-Y(Q)
Same model may have multiple batches, images only for reference.

2SA1360-Y(Q)

Part No 2SA1360-Y(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT PNP 150V 0.05A 3-Pin(3+Tab) TO-126IS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-126
Collector Base Voltage (VCBO) -150 V
Collector Emitter Saturation Voltage -1 V
Collector Emitter Voltage (VCEO) -150 V
Element Configuration Single
Emitter Base Voltage (VEBO) -5 V
Gain Bandwidth Product 200 MHz
hFE Min 80
Lead Free Yes
Max Power Dissipation 1.2 W
Polarity PNP
RoHS Compliant
Win Source Part Number 1036556-2SA1360-Y(Q)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1360-Y(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SA1360-Y(Q) is a PNP RF transistor with a gain bandwidth product of 200 MHz.

  • Gain Bandwidth Product: 200 MHz
  • Mounting Type: SMD (SMT)
  • Case/Package: TO-126
  • Maximum Power Dissipation: 1.2 W
  • Collector Base Voltage (VCBO): -150 V
  • Collector Emitter Voltage (VCEO): -150 V
  • Emitter Base Voltage (VEBO): -5 V
  • hFE min: 80
  • Collector Emitter Saturation Voltage: -1 V
  • RoHS Compliant: Yes
  • Lead-Free: Yes
  • Supply: Short Supply
  • Popularity: Low

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