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Same model may have multiple batches, images only for reference.
HN2C01FEYTE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN2C01FEYTE85LF

Part No HN2C01FEYTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 50V 0.15A ES6
Datasheet
HN2C01FEYTE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 6V
Maximum Power Dissipation 100mW
Frequency - Transition 60MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 112261-HN2C01FEYTE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN2C01FEYTE85LF CAD Model

Description

The Toshiba HN2C01FEYTE85LF is an obsolete (EOL) dual NPN transistor that is ideal for use in discrete semiconductor products. This component is manufactured by Toshiba Semiconductor and Storage and has a medium popularity rating. This transistor has a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 150mA. It also has a low collector-emitter saturation voltage, making it ideal for use in low voltage, high current applications.

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