The HN1C01FU-GR,LF is a dual NPN transistor from Toshiba Semiconductor and Storage. It is a Discrete Semiconductor Product that comes in a US6 package. The device has a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 200mW. It has a typical gain (hFE) of 200 at 2mA and 6V. The HN1C01FU-GR,LF features a collector cut-off current (Max) of 100nA (ICBO) and a maximum Vce (sat) of 250mV at 10mA and 100mA. The device operates at a temperature range of 125°C (TJ) and has a transition frequency of 80MHz. The HN1C01FU-GR,LF is a popular choice among manufacturers due to its high reliability and sufficient supply and demand status.