The Toshiba Semiconductor and Storage Schottky diode is a high-performance semiconductor device that is ideal for use in various electronic applications. This diode is designed to operate at a maximum junction temperature of 125°C, making it suitable for use in high-temperature environments. The diode has a voltage rating of 40V and a forward voltage of 600mV at 100mA. The reverse leakage current is 5μA at 40V. This diode comes in an ESV package and is mounted using SMD (SMT) technology. It is a 2 independent diode configuration and has an average rectified current of 100mA. This product is categorized under Discrete Semiconductor Products and is currently in active status. The supply and demand status is sufficient.