The K11A60D is a high-performance N-Channel MOSFET from Toshiba Semiconductor and Storage. It is a 600V device with a maximum continuous drain current of 11A at 25°C. It is designed to operate at a maximum power dissipation of 45W and a maximum gate-source voltage of ±30V. The K11A60D is available in a TO-220SIS package with through-hole mounting.

The K11A60D is a versatile MOSFET that can be used in a wide range of applications, including:

Motor control Power supplies Lighting Renewable energy Industrial automation It is particularly well-suited for applications where high efficiency and reliability are required.

Features

High performance N-Channel MOSFET 600V drain-source breakdown voltage 11A maximum continuous drain current 45W maximum power dissipation ±30V maximum gate-source voltage TO-220SIS package with through-hole mounting Benefits

High efficiency Reliability Versatility Applications

Motor control Power supplies Lighting Renewable energy Industrial automation Typical Performance Characteristics

Gate-source threshold voltage: 4V @ 1mA Maximum Rds On at Id, Vgs: 650 mOhm @ 5.5A, 10V Maximum gate charge: 28nC @ 10V Maximum input capacitance: 1550pF @ 25V Package Information

The K11A60D is available in a TO-220SIS package with through-hole mounting. The package dimensions are shown below:

Pin 1 is the source terminal, pin 2 is the gate terminal, and pin 3 is the drain terminal.

Conclusion

The K11A60D is a high-performance N-Channel MOSFET from Toshiba Semiconductor and Storage. It is a versatile device that can be used in a wide range of applications, including motor control, power supplies, lighting, renewable energy, and industrial automation. It is particularly well-suited for applications where high efficiency and reliability are required.