The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

• GPTDescription: The MOSFET has a drain-source breakdown voltage of 500V and a maximum continuous drain current of 4A @ 25°C.
• GPTDescription: It has a power dissipation of 30W (Tc) and a maximum Rds On @ Id,Vgs of 2 Ohm @ 2A, 10V.
• GPTDescription: The MOSFET has a gate-source threshold voltage of 4.4V @ 1mA, max gate charge of 9nC @ 10V, and max input capacitance of 380pF @ 25V.
• GPTDescription: It has a maximum gate-source voltage of ±30V and can be mounted through hole.
• GPTDescription: The MOSFET is available in TO-220SIS packaging and has a temperature range of 150°C (TJ).
• GPTDescription: It is suitable for use in various applications where high voltage and high current are required.