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Same model may have multiple batches, images only for reference.
MT3S16U Real Image
Same model may have multiple batches, images only for reference.

MT3S16U

Part No MT3S16U
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS RF NPN 5V 1GHZ USM
Datasheet
MT3S16U Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 5V
Frequency - Transition 4GHz
Noise Figure (dB Typ @ f) 2.4dB @ 1GHz
Gain 4.5dBi
Maximum Power Dissipation 100mW
Typical Gain (hFE) (Min) 80 @ 5mA, 1V
Maximum Current Collector 60mA
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 329307-MT3S16U
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MT3S16U CAD Model

Description

The Toshiba Semiconductor and Storage 329307-MT3S16U is a NPN transistor with a maximum collector-emitter breakdown voltage of 5V and a typical gain of 80 @ 5mA, 1V.

  • Gain: 4.5dBi
  • Frequency Transition: 4GHz
  • Noise Figure: 2.4dB @ 1GHz
  • Maximum Current Collector: 60mA
  • Maximum Power Dissipation: 100mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8769 $65.6915
75+ $1.5408 $115.5600
120+ $1.4923 $179.0760
160+ $1.4438 $231.0080
210+ $1.3964 $293.2440
280+ $1.2520 $350.5600
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