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Same model may have multiple batches, images only for reference.
MT6L57AETE85L
Same model may have multiple batches, images only for reference.

MT6L57AETE85L

Part No MT6L57AETE85L
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 10 V
Collector Emitter Voltage (VCEO) 5 V
Frequency 10 GHz
Maximum Operating Temperature 125 °C
Max Power Dissipation 100 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 2
Number of Pins 6
Packaging Tape and Reel
Polarity NPN
Power Dissipation 100 mW
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1080988-MT6L57AETE85L
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian MT6L57AETE85L CAD Model

Description

Toshiba Semiconductor and Storage introduces the 1080988-MT6L57AETE85L electronic component.

  • Type: RF Transistor (BJT)
  • Polarity: NPN
  • Frequency: 10 GHz
  • Maximum Power Dissipation: 100mW
  • Number of Elements: Two
  • Mount: Surface Mount
  • Packaging: Tape and Reel
  • Number of Pins: Six
  • RoHS Compliant: Yes
  • Collector-Base Voltage (VCBO): 10V
  • Collector-Emitter Voltage (VCEO): 5V

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