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Same model may have multiple batches, images only for reference.
RN1101CT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

RN1101CT(TPL3)

Part No RN1101CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.05W CST3
Datasheet
RN1101CT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 50mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 098704-RN1101CT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1101CT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage RN1101CT(TPL3) is a pre-biased NPN transistor with a breakdown voltage of 20V and a maximum current collector of 50mA.

  • Type: pre-biased NPN transistor
  • Breakdown Voltage: 20V
  • Maximum Current Collector: 50mA
  • Collector Cut-off Current: 500nA
  • Typical Gain (hFE): 30 @ 10mA and 5V
  • Package: CST3
  • Maximum Power Dissipation: 50mW
  • Status: obsolete (EOL)
  • Mounting: SMD (SMT) technology
  • Resistor-Base (R1): 4.7k Ohms
  • Resistor-Emitter Base (R2): 4.7k Ohms

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