The RN1102(TE85L is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for switching and amplification applications. This transistor offers a balance of performance characteristics suitable for various electronic circuits. It's commonly used in circuits where a small signal needs to control a larger current or voltage.

Applications

• Switching circuits
• Amplification circuits
• Inverter circuits
• Driver stages
• General purpose amplification

Features

• NPN Silicon Epitaxial Planar Transistor
• Low saturation voltage
• High current gain (hFE)
• Small package size
• Lead-free plating

Benefits

• Efficient switching performance
• Improved circuit performance due to high current gain
• Compact design due to small package
• Environmentally friendly due to lead-free construction
• Reliable performance in a wide range of applications

Specifications

The RN1102(TE85L has the following general specifications:

• Polarity: NPN
• Collector-Emitter Voltage (VCEO): 50V
• Collector Current (IC): 0.15A
• Collector Power Dissipation (PC): 0.2W
• DC Current Gain (hFE): Typically 100 to 300 (depending on IC and VCE)
• Operating and Storage Temperature Range: -55 to 150 °C
• Package: SOT-23 (or equivalent)

The specific current gain (hFE) is typically measured at specific collector current (IC) and collector-emitter voltage (VCE) conditions, as provided in the datasheet. Ensure to consult the datasheet for precise values and operating conditions.