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Same model may have multiple batches, images only for reference.
RN1102CT(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1102CT(TPL3)

Part No RN1102CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.05W CST3
Datasheet
RN1102CT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 60 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 50mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 102138-RN1102CT(TPL3)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1102CT(TPL3) CAD Model

Description

The RN1102CT(TPL3) is an NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage.

  • Type: NPN pre-biased transistor
  • Manufacturer: Toshiba Semiconductor and Storage
  • Supply and Demand Status: balanced
  • Applications: amplify or switch electronic signals
  • Maximum Collector-Emitter Breakdown Voltage: 20V
  • Maximum Power Dissipation: 50mW

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