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RN1106F

Part No RN1106F
Manufacturer Toshiba Semiconductor and Storage
Description SWITCHING ,INVERTER CIRCUIT,INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1243282-RN1106F
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1106F CAD Model

Description

The RN1106F is a silicon epitaxial planar type transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for switching and amplification applications, particularly in low-power circuits where efficiency and reliability are critical. It is commonly used in various electronic devices and systems for signal processing and control.

Applications:

  • Switching circuits: Ideal for use as a switching element in various electronic circuits.
  • Amplification circuits: Suitable for small signal amplification.
  • Inverter circuits: Used in digital logic inverters.
  • Portable electronic devices: Employed in devices such as smartphones, tablets, and other battery-powered gadgets.
  • General purpose switching: Broad application in general-purpose switching circuits.

Features:

  • Low saturation voltage: Ensures minimal voltage drop when the transistor is fully on, enhancing efficiency.
  • High-speed switching: Capable of rapid switching, crucial for high-frequency applications.
  • Compact package: Allows for high-density mounting on circuit boards, saving space.
  • Excellent linearity: Provides stable and predictable performance in amplification applications.
  • High current gain (hFE): Provides good amplification characteristics.

Benefits:

  • Improved efficiency: The low saturation voltage minimizes power loss, leading to more efficient circuits.
  • Enhanced performance: High-speed switching allows for faster and more responsive electronic devices.
  • Space-saving design: The compact package facilitates the design of smaller and more portable devices.
  • Reliable operation: Toshiba's manufacturing standards ensure consistent and dependable performance.
  • Cost-effective solution: Provides a balance of performance and price, making it a suitable choice for many applications.

Additional Details:

The RN1106F's specific technical specifications include its collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PD). These parameters should be carefully considered when selecting this transistor for a particular application. The device is typically available in a small surface-mount package, facilitating automated assembly processes. Understanding the transistor's characteristics and application requirements is essential for optimizing its performance in electronic circuits. Always refer to the manufacturer's datasheet for precise details and recommended operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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