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Same model may have multiple batches, images only for reference.
RN1106MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1106MFV,L3F

Part No RN1106MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN
Datasheet
RN1106MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Win Source Part Number 1092450-RN1106MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1106MFV,L3F CAD Model

Description

This RN1106MFV,L3F electronic component is a NPN - Pre-Biased transistor from Toshiba Semiconductor and Storage with a Win Source Part Number of 1092450-RN1106MFV,L3F.

  • Category: Discrete Semiconductor Products
  • Status: active
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Supply and Demand Status: sufficient
  • Threat of Fake Products: 53% in the open market

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,080+ $0.0465 $50.2200
2,620+ $0.0382 $100.0840
4,055+ $0.0370 $150.0350
5,590+ $0.0358 $200.1220
7,230+ $0.0346 $250.1580
9,680+ $0.0310 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 1080 pcs
Order Increment : 1 pcs
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