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TSM150P03PQ33 RGG

Part No TSM150P03PQ33 RGG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, P-CHANNEL, -30V,
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 29.3nC @ 10V
Max Input Capacitance 1829pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 27.8W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PDFN (3x3)
Dimension 8-PowerWDFN
Win Source Part Number 1114713-TSM150P03PQ33 RGG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 5k pcs
Ultra Librarian 3D Model Ultra Librarian TSM150P03PQ33 RGG CAD Model

Description

The TSM150P03PQ33 RGG is a P-Channel MOSFET manufactured by Taiwan Semiconductor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 36A (Tc) @ 25°C
  • Power Dissipation (Max): 27.8W (Tc)
  • Rds On: 15 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Gate Charge: 29.3nC @ 10V
  • Input Capacitance: 1829pF @ 15V
  • Gate-Source Voltage: ±20V
  • Package: 8-PDFN (3x3)
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3568 $58.8720
395+ $0.2928 $115.6560
615+ $0.2837 $174.4755
845+ $0.2746 $232.0370
1,090+ $0.2653 $289.1770
1,460+ $0.2379 $347.3340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,350 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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