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RN1116(TE85L,F)

Part No RN1116(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W SSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 096616-RN1116(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1116(TE85L,F) CAD Model

Description

This electronic component is a transistor manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 096616-RN1116(TE85L,F)
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Frequency Transition: 250MHz
  • Transistor Polarity: NPN - Pre-Biased
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Case / Package: SSM
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 50 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $14.0148 $70.0740
11+ $11.4992 $126.4912
16+ $11.1400 $178.2400
22+ $10.7808 $237.1776
28+ $10.4216 $291.8048
38+ $9.3440 $355.0720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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