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RN1301,LF

Part No RN1301,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W USM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 099731-RN1301,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1301,LF CAD Model

Description

This discrete semiconductor product is an NPN - pre-biased transistor with a frequency transition of 250MHz.

  • Supply and Demand Status: Sufficient
  • Case/Package: USM
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,215+ $0.0413 $50.1795
2,950+ $0.0339 $100.0050
4,560+ $0.0329 $150.0240
6,290+ $0.0318 $200.0220
8,120+ $0.0308 $250.0960
10,870+ $0.0276 $300.0120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,690 pieces
MOQ: 1215 pcs
Order Increment : 1 pcs
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