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Same model may have multiple batches, images only for reference.
RN1301(TE85L,F)
Same model may have multiple batches, images only for reference.

RN1301(TE85L,F)

Part No RN1301(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Digital BJT NPN 50V 100mA 100mW 3-Pin USM T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package SC
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 50 V
Continuous Collector Current 100 mA
Element Configuration Single
hFE Min 30
Lead Free Lead Free
Max Breakdown Voltage 50 V
Max Collector Current 100 mA
Max Operating Temperature 150 °C
Max Power Dissipation 100 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Polarity NPN
Power Dissipation 100 mW
Radiation Hardening No
RoHS Compliant
Transition Frequency 250 MHz
Win Source Part Number 1140496-RN1301(TE85L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RN1301(TE85L,F) CAD Model

Description

The RN1301(TE85L,F) is a 3-pin NPN RF transistor manufactured by Toshiba Semiconductor and Storage.

  • Package: Surface mount
  • Supply: Digi-Reel
  • Power Dissipation: 100mW
  • Breakdown Voltage: 50V
  • Minimum hFE: 30
  • Transition Frequency: 250MHz
  • Operating Temperature: -55°C to 150°C
  • Lead-Free: Yes
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
625+ $0.0924 $57.7500
1,540+ $0.0751 $115.6540
2,385+ $0.0728 $173.6280
3,280+ $0.0705 $231.2400
4,240+ $0.0681 $288.7440
5,665+ $0.0612 $346.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 239,000 pieces
MOQ: 625 pcs
Order Increment : 1 pcs
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