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RN1308,LF

Part No RN1308,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W USM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 106125-RN1308,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1308,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN1308,LF is a discrete semiconductor product that is categorized under the family of NPN - Pre-Biased Transistors.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Transistor Polarity: NPN - Pre-Biased
  • Resistor - Base (R1) (ohms): 22k
  • Resistor - Emitter Base (R2) (ohms): 47k
  • Frequency - Transition: 250MHz
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6607 $59.4630
215+ $0.5417 $116.4655
335+ $0.5244 $175.6740
455+ $0.5082 $231.2310
590+ $0.4909 $289.6310
790+ $0.4401 $347.6790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,370 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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