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Same model may have multiple batches, images only for reference.
RN1314(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1314(TE85L,F)

Part No RN1314(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W USM
Datasheet
RN1314(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 109238-RN1314(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1314(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN1314(TE85L,F) is an NPN pre-biased transistor with a maximum current collector of 100mA and a maximum VCEO collector-emitter breakdown voltage of 50V.

  • It has a: frequency transition of 250MHz and a typical gain (hFE) of 50 @ 10mA, 5V.
  • The transistor has a: maximum power dissipation of 100mW and a collector cut-off current (Max) of 500nA.
  • It has a: medium popularity and is in the Discrete Semiconductor Products category.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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Availability: 3,700 pieces
MOQ: 40 pcs
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