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RN1401(TE85L,F)

Part No RN1401(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Saturation Voltage 300 mV
Collector Emitter Voltage (VCEO) 50 V
Element Configuration Single
Height 1.1 mm
Length 2.9 mm
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel
Radiation Hardening No
RoHS Compliant
Width 1.5 mm
Win Source Part Number 982412-RN1401(TE85L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1401(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN1401(TE85L,F) is an RF transistor (BJT) with a single element configuration manufactured by Toshiba Semiconductor and Storage.

  • Packaging: tape and reel
  • Mounting: surface mount technology
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C
  • Collector-Emitter Voltage (VCEO): 50V
  • Maximum Collector Current: 100mA
  • Collector-Emitter Saturation Voltage: 300mV
  • RoHS: compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
495+ $0.1178 $58.3110
1,195+ $0.0970 $115.9150
1,855+ $0.0936 $173.6280
2,535+ $0.0912 $231.1920
3,290+ $0.0878 $288.8620
4,415+ $0.0785 $346.5775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 495 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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