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Same model may have multiple batches, images only for reference.
RN1414,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1414,LF

Part No RN1414,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.2W S-MINI
Datasheet
RN1414,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 102861-RN1414,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1414,LF CAD Model

Description

The RN1414,LF is an NPN pre-biased transistor from Toshiba Semiconductor and Storage.

  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Current - Collector (Max): 100mA
  • Frequency - Transition: 250MHz
  • Typical Gain: 50 @ 10mA and 5V
  • Resistor - Base (R1) (Ohms): 1k ohms
  • Resistor - Emitter Base (R2) (Ohms): 10k ohms
  • Case/Package: S-Mini
  • Power - Max: 200mW
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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