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Same model may have multiple batches, images only for reference.
RN1504(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1504(TE85L,F)

Part No RN1504(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMV
Datasheet
RN1504(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 300mW
Mounting Style SMD/SMT
Package SC-74A, SOT-753
Manufacturer Device Package SMV
Win Source Part Number 100381-RN1504(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1504(TE85L,F) CAD Model

Description

The RN1504(TE85L,F) is a bipolar transistor array manufactured by Toshiba Semiconductor and Storage.

  • Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Popularity: Medium
  • Description: Dual NPN pre-biased emitter-coupled device that provides high current gain and low noise.
  • Power - Max: 300mW
  • Current - Collector (Max): 100mA
  • Ideal for: Applications that require a low-power bipolar transistor array with high gain and low noise.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,090+ $0.0531 $57.8790
2,635+ $0.0439 $115.6765
4,170+ $0.0416 $173.4720
5,715+ $0.0404 $230.8860
7,355+ $0.0393 $289.0515
9,680+ $0.0358 $346.5440
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Availability: 2,999 pieces
MOQ: 1090 pcs
Order Increment : 1 pcs
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